1/5 T2550H-600T snubberless ? high temperature 25a triac s april 2002 - ed: 5a main features: description specifically designed for use in high temperature environment (found in hot appliances such as cookers, ovens, hobs, electric heaters, coffee machines...), the new 25 amps t25500h triacs provide an enhanced performance in terms of power loss and thermal dissipation. this allows optimization of the heatsinking dimensioning, leading to space and cost effectivness when compared to electro-mechnical solutions. based on st snubberless technology, they offer high commutation switching capabilities and high noise immunity levels. and, thanks to their clip assembly technique, they provide a superior performance in surge current handling. symbol value unit i t(rms) 25 a v drm /v rrm 600 v i gt (q 1 ) 50 ma absolute maximum ratings symbol parameter value unit i t(rms) rms on-state current (full sine wave) tc = 125 c25 a i tsm non repetitive surge peak on-state current (full cycle, tj initial = 25 c) f = 60 hz t = 16.7 ms 260 a f = 50 hz t = 20 ms 250 i ti t value for fusing tp = 10 ms 340 a s di/dt critical rate of rise of on-state current i g =2xi gt ,tr 100 ns f = 120 hz tj = 150 c50 a/ m s v dsm /v rsm non repetitive surge peak off-state voltage tp = 10 ms tj = 25 c 700 v i gm peak gate current tp = 20 m stj=150 c4 a p g(av) average gate power dissipation tj = 150 c1 w t stg t j storage junction temperature range operating junction temperature range -40to+150 -40to+150 c to-220ab
T2550H-600T 2/5 electrical characteristics (tj = 25 c, unless otherwise specified) static characteristics note 1: minimum igt is guaranted at 10% of igt max. note 2: for both polarities of a2 referenced to a1 thermal resistance product selector ordering information symbol test conditions quadrant value unit i gt (1) v d =12v r l =33 w i - ii - iii max. 50 ma v gt i - ii - iii max. 1.3 v v gd v d =v drm r l =3.3k w tj = 150 c i - ii - iii min. 0.15 v i h (2) i t =500ma max. 75 ma i l i g =1.2i gt i - ii - iii max. 90 ma dv/dt (2) v d =67%v drm gate open tj = 150 c min. 500 v/ m s (di/dt)c (2) without snubber tj = 150 c min. 11.1 a/ms symbol test conditions value unit v tm (2) i tm =35a tp=380 m s tj = 25 c max. 1.5 v v to (2) threshold voltage tj = 150 c max. 0.80 v r d (2) dynamic resistance tj = 150 c max. 19 m w i drm i rrm v drm =v rrm tj = 25 c max. 5 m a tj = 150 c8.5 ma v drm /v rrm =400v (at mains peak voltage) tj = 150 c5.5 symbol parameter value unit r th(j-c) junction to case (ac) 0.8 c/w part number voltage sensitivity type package T2550H-600T 600 v 50 ma snubberless to-220ab
T2550H-600T 3/5 other information part number marking weight base quantity packing mode T2550H-600T t2550h600t 2.3 g 250 bulk T2550H-600Trg t2550h600t 2.3 g 50 tube fig. 1: maximum power dissipation versus rms on-state current (full cycle). fig. 2: rms on-state current versus case temperature (full cycle). fig. 3: relative variation of thermal impedance versus pulse duration. fig. 4: relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values).
T2550H-600T 4/5 fig. 5: surge peak on-state current versus number of cycles. fig. 6: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of i t. fig. 7: on-state characteristics (maximum values). fig. 8: relative variation of critical rate of decrease of main current versus junction temperature (typical values). fig. 9: relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values). fig. 10: leakage current versus junction temperature for different values of blocking voltage (typical values).
T2550H-600T 5/5 fig. 11: acceptable repetitive peak off-state voltage versus case-ambient thermal resistance. package mechanical data to-220ab (plastic) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m 2.60 0.102 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - isreal - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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